SLD-1000 Datasheet, PDF (4/5 Pages) SIRENZA MICRODEVICES – 4 Watt Discrete LDMOS FET-Bare Die

SLD-1000 10-2700 MHz 4 Watt LDMOS FET - Bare Die
Typical Performance Curves for packaged die tested in SLD-1083CZ 900 MHz Application Circuit
50
45
40
35
30
25
20
15
10
5
0
900
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W
0
-4
Gain
Efficiency
-8
IRL
-12
-16
905
910
915
920
Frequency (MHz)
-20
925
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=50mA, Freq=915 MHz
24
60
23
50
22
40
21
30
20
20
Gain
Efficiency
19
10
18
0
0
1
2
3
4
5
Pout (W)
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W PEP, Delta F=1 MHz
60
0
Gain
Efficiency
IM3
IM5
50
IM7
IRL
-10
40
-20
30
-30
20
-40
10
-50
0
900
905
910
915
920
Frequency (MHz)
-60
925
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=50mA, Freq=915 MHz, Delta F=1 MHz
50
-20
45
-25
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
10
-60
Gain
Efficiency
5
IM3
IM5
-65
IM7
0
-70
0
1
2
3
4
5
6
Pout (W PEP)
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104291 Rev C