CGA-6618 Datasheet, PDF (2/8 Pages) Stanford Microdevices – DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER

CGA-6618 Dual GaAs HBT Amplifier
Absolute Maximum Ratings
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D < (T_J - T_L) / R_TH, j-l
Parameter
Max. Device Current (I_D)
Max. Device Voltage (V_D)
Max. RF Input Power
Max. Junction Temp. (T_J)
Operating Temp. Range (T_L)
Max. Storage Temp.
Absolute Limit
240 mA
7V
+20 dBm
+150°C
-40°C to +85°C
+150°C
Typical RF Performance: V_S=8V, I_D=160mA @ T_L=+25°C, R_BIAS=33 Ohms, Push-Pull Config.
Gain vs. Frequency
18
17
-40C
+25C
16
+85C
15
14
13
12
11
10
0
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
|S11| (dB) vs. Frequency
-40C
+25C
+85C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
|S22| (dB) vs. Frequency
-40C
+25C
+85C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101994 Rev J