SLD-1026Z Datasheet, PDF (1/21 Pages) SIRENZA MICRODEVICES – 3 Watt Discrete LDMOS Device Plastic Surface Mount Package

Product Description
Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance
LDMOS transistor designed for operation from 10 to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency
at a low cost. The SLD-1026Z is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications.The
power transistor is fabricated using Sirenza’s latest, high performance
LDMOS II process. This product features a RoHS/WEEE Compliant
package with matte tin finish, designated by the ‘Z’ suffix.
Functional Schematic Diagram
ESD
Protection
Backside Paddle = Ground
Preliminary
SLD-1026Z
Pb RoHS Compliant
& Green Package
3 Watt Discrete LDMOS Device
Plastic Surface Mount Package
Proprietary SOF-26 Package
Product Features
• 3 Watt Output P_1dB
• Single Polarity Supply Voltage
• High Gain: 19 dB at 915 MHz
• High Efficiency: 44% at 3W CW
• XeMOS II LDMOS
• Proprietary Low Thermal Resistance Package
• Integrated ESD Protection, Class 1B
Applications
• Base Station PA driver
• Repeaters
• RFID
• Military Communication
• GSM / EDGE / CDMA / WCDMA
RF Specifications
Symbol
Parameter
Frequency
Frequency of Operation
Gain
3 Watt CW, 902-928 MHz
Gain
3 Watt CW, 2110-2170 MHz
Efficiency
Drain Efficiency at 3 Watt CW , 915MHz
Efficiency
Drain Efficiency at 3 Watt CW , 2140MHz
IRL
Input Return Loss, 3 Watt Output Power, 915MHz
IRL
Linearity
2 carrier WCDMA
performance
Input Return Loss, 3 Watt Output Power, 2140 MHz
3^rd Order IMD at 3 Watt PEP (Two Tone), 915MHz
3^rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz
1dB Compression (P_1dB), 915 MHz
1dB Compression (P_1dB), 2140 MHz
ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
R_TH
Thermal Resistance (Junction-to-Case)
Test Conditions V_DS = 28.0V, I_DQ = 50mA, T_Flange = 25ºC
Unit
Min
MHz
10
dB
dB
%
%
dB
dB
dBc
dBc
Watt
Watt
dBc
dBc
ºC/W
Typ
Max
-
2700
19
14
44
43
-12
-12
-28
-28
3.5
3.0
-48
-47
17
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104157 Rev F