SBB-1089Z Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – 50 - 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

SBB-1089Z
Product Description
Sirenza Microdevices’ SBB-1089Z is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-1089Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-1089Z product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency (w/ App. Ckt.)
35
25
S21
15
50 - 850 MHz, Cascadable Active Bias
InGaP HBT MMIC Amplifier
Pb RoHS Compliant
& Green Package
Product Features
• OIP3 = 43.1 dBm @ 240MHz
• P1dB = 19.6 dBm @ 500MHz
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Bias Circuit
• Low Thermal Resistance
• MSL 1 moisture rating
5
-5
-15
-25
-35
50
S11
S22
150 250 350 450 550 650
Frequency (MHz)
Applications
• Receiver IF Amplifier
• Cellular, PCS, GSM, UMTS
• Wireless Data, Satellite Terminals
750 850
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
S₂₁
Small Signal Gain
P_1dB
Output Power at 1dB Compression
IP₃
Third Order Intercept Point
70 MHz
15.5
dB
240 MHz
14
15.5
17
400 MHz
14
15.5
17
70 MHz
19
dBm
240 MHz
19
400 MHz
18
19
70 MHz
42
dBm
240 MHz
43
400 MHz
38.5
40.5
Bandwidth
IRL
S₁₁, S₂₂: Minimum 10dB Return Loss (typ.)
Input Return Loss
MHz
dB
70 -500MHz
14
50 - 850
18
ORL
Output Return Loss
dB
70 -500MHz
12
16
|S_12|
Reverse Isolation
dB
70 -500MHz
18
NF
Noise Figure
dB
500 MHz
3.5
4.2
V_D
I_D
R_TH, j-l
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
mA
°C/W
5
5.3
82
90
98
48.8
Test Conditions:
V_D = 5V
T_L = 25°C
I_D = 90mA Typ.
Z_S = Z_L = 50 Ohms
OIP₃ Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-103998 Rev D