SBA-5089 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier

Product Description
Sirenza Microdevices’ SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process technology
provides broadband performance up to 5 GHz with excellent
thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher
suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss
30
20
S21
10
0
-10
S22
-20
S11
-30
-40
0
1
2
3
4
5
6
Frequency (GHz)
SBA-5089
SBA-5089Z ^{Pb RoHS Compliant}
& Green Package
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• IP3 = 34.0dBm @ 1950MHz
• Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals
Sym bol
P a ra m e te r
U n its
F re q u e n c y
M in .
Ty p .
M ax.
G
S m a ll S ig n a l G a in
dB
850 MHz
1950 MHz
1 8 .5
1 6 .5
2 0 .0
1 8 .0
2 1 .5
1 9 .5
P _1dB
O utp ut P o w e r a t 1 d B C o m p re s s io n
dB m
850 MHz
1950 MHz
1 8 .0
1 9 .7
1 9 .5
O IP ₃
O u tp u t T h i r d O r d e r In te r c e p t P o i n t
dB m
850 MHz
1950 MHz
3 2 .0
3 6 .0
3 4 .0
P _OUT
O u tp u t P o w e r @ - 4 5 d B c A C P IS - 9 5
9 F o rw a rd C h a n n e ls
dB m
1950 MHz
1 3 .0
B a nd w id th D e te rm in e d b y R e tu rn L o s s (> 1 0 d B )
M Hz
4400
IR L
In p u t R e tu r n L o s s
dB
1950 MHz
1 4 .0
2 0 .0
ORL
O utp ut R e turn L o s s
dB
1950 MHz
9 .0
11 .0
NF
N o is e F ig ure
dB
1950 MHz
4 .5
5 .5
V_D
D e v ic e O p e ra tin g V o lta g e
V
4 .7
4 .9
5 .3
I_D
D e vic e O p e ra ting C urre nt
mA
72
80
88
R _TH , j-l
T h e rm a l R e s is ta n c e (ju n c tio n to le a d )
°C /W
70
Test Conditions:
V_S = 8 V
R_BIAS = 39 Ohms
I_D = 80 mA Typ.
T_L = 25ºC
OIP₃ Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z_S = Z_L = 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or and components and reflect the approximate performance
of the products as measured by those tests. Any difference in circuit implementation, test software or test equipment may affect actual performance. The information provided herein is believed to be reliable at press
time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject
to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits
described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-102743 Rev. D