STD181GKXXB Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD181GKXX B
Thyristor-Diode Modules
1500
W ^. _{3 STD181B}
w3
B6
500
Pvtot
0
0I_{D IRMS}100
200
400 _A 500
F ig.4L Power dissipation of three modules vs. direct and rms current
10000
uC
1/2 ._STD181B
1000
ITM=
500A
200A
100A
50A
20 A
Qrr
100
1 -di T/dt
10
Fig.5 Recovered charge vs. current decrease
Tvj=125^oC
A/us 100
600
. ^A
500 ^{1/2 STD181B}
400
typ.
max.
300
200
100
IT
0
0 Vt 0.5
Fig.7 On-state charactristics
_ _Tvj=25 O_C
Tvj=125 ^OC
1
1.5
V2
1500
0.05 ^{0.04 0.03 0.02 Rth(c-a)}
W
0.06
0.07
0.08
0.1
0.12
0.16
500 ^0.2
0.25
0.3
K/W
Pvtot
0
0 Ta
50
100
O_C
Fig.4R Power dissipation of three modules vs. case temp
75
Tc
85
95
105
115
O_C
125
150
0.3
K/W
0.25
1/2 . _STD181B
Zth(j-s)
0.2
0.15
Zth(j-c)
0.1
0.05
Zth
0
0.001 t 0.01 0.1
1
Fig.6 Transient thermal impedance vs. time
10 s 100
2
IT(OV)
ITSM
1.6
1.4
1/2 ._STD181B
1.2
1
0.8
0.6
0.4
1t
10
Fig.8 Surge overload current vs. time
ITSM(25 ^OC) =5400A
ITSM(125 ^OC)=5000A
._{0 VRRM}
. 0.5 VRRM
.1 VRRM
100
ms 1000
P4
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