STD181GKXXB Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD181GKXX B
Thyristor-Diode Modules
300
W
200
. 1/2 STD181B
rec. 30
15
rec.
sin. ¹⁸⁰
180
120
90
60
cont.
100
PTAV
0
0 ITAV 50
100
150
Fig.1L Power dissipation per thyristor vs. on-state current
A 200
500
W
._{1 STD181B}
400
300
200
100
Pvtot
0
0 ^IRMS 100
200
300
Fig.2L Power dissipation per module vs. rms current
A 400
1200
W
1000
2 ^. STD181B
800
R
L
600
400
200
Pvtot
0
0 I_D 100
200
300
Fig.3L Power dissipation of two modules vs. direct current
A 400
300
0.4 0.35 0.3 0.25 0.2
W _0.45
0.5
Rth(j-a)
200 0.6
0.7
0.8
1
100 1.2
PTAV
1.6
2
2.5
K/W
0
0
Ta 50
100 ^O_C
Fig.1R Power dissipation per thyristor vs. ambient temp
150
500
W
0.14 0.12 0.1 0.07 0.04 0.0_-2 _{Rth(c a)}
0.17
400 ^0.2
0.25
300 ^0.3
0.4
200 ^0.5
0.6
0.8
100 ¹
K/W
Pvtot
0
0
Ta 50
100
Fig.2R Power dissipation per module vs. case temp
80
Tc
89
98
107
116
O_C
125
O_{C 150}
1200
W
1000
0.05 0.04 0.03 0.02
0.06
0.07
0.08
Rth(c-a)
800 ^0.1
0.12
600 _0.16
0.2
400 0.25
0.3
0.4
200 _0.5
Pvtot _K/W
0
0 Ta
50
100 ^O_C
Fig.3 R Power dissipation of two modules vs. case temp
71
Tc
80
89
98
107
116
O_C
125
150
P3
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