SUR2X120-02_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR2x120-02
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
200
A
175
I_F ¹⁵⁰
125
100
T_VJ=150°C
75
T_VJ=100°C
50
T_VJ=25°C
25
0
0.0
0.5
1.0 V 1.5
V_F
Fig. 1 Forward current I_F versus V_F
2.0
1.5
K_f
1.0
Q_r
I_RM
2.0 _{TVJ= 100°C}
ˇ C ^{VR = 100V}
Q_r 1.5
I_F=240A
1.0
I_F=120A
I_F= 60A
0.5
60
A
50
I_RM
40
30
T_VJ= 100°C
V_R = 100V
I_F=240A
I_F=120A
I_F= 60A
20
10
0.0
10
100
A/us 1000
-di_F/dt
Fig. 2 Typ. reverse recovery charge Q_r
versus -di_F/dt
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Typ. peak reverse current I_RM
versus -di_F/dt
150
ns
t_{rr 125}
100
T_VJ= 100°C
V_R = 100V
I_F=240A
I_F=120A
I_F= 60A
12
V
10
V_FR
8
6
T_VJ= 100°C
I_F = 120A
t_fr
3.0
uˇs
2.5
V_FR
t_fr
2.0
1.5
0.5
75
4
1.0
2
0.5
0.0
0
50
100 °C 150
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
1
K/W
D=0.5
0.1 ^0.2
Z_thJC
0.1
0.05
0.02
0.01 0.01
Single Pulse
50
0 200 400 600 800 A/us
-di_F/dt
Fig. 5 Typ. recovery time t_rr
versus -di_F/dt
0
0.0
0 100 200 300 400 500 A/us
di_F/dt
Fig. 6 Typ. peak forward voltage
V_FR and t_fr versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.0725
0.028
2
0.1423
0.092
3
0.2852
0.35
0.001
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
P3
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