SUR2X120-02_16 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR2x120-02
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=125^oC; VR=0.8^.VRRM
IF=120A; TVJ=150^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=400A/us; VR=30V; TVJ=25^oC
VR=100V; IF=100A; -diF/dt=200A/us; L_<0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
1
0.5
mA
20
0.89
0.95
1.10
V
0.7
V
2.1
m
1.0
0.5
K/W
35
50
ns
12
15
A
FEATURES
* International standard package
miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Glass passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* UL File NO.E310749
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
P2
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