SUR2X100-12 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR2x100-12
Ultra Fast Recovery Epitaxial Diodes
150
A
125
I_F
100
75
50
25
T =150°C
VJ
T_VJ=100°C
T_VJ= 25°C
0
0.0 0.5 1.0 1.5 V 2.0
V_F
Fig. 1 Forward current I versus V
F
F
1.4
1.2
K_f
1.0
0.8
0.6
I_RM
Q_r
16
C
14
T_VJ= 100°C
V_R = 600V
Q_{r 12}
10
8
6
I_F=200A
I_F=100A
I_F= 50A
4
2
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q
r
versus -di_F/dt
500
ns
450
t_rr
400
T_VJ= 100°C
V_R = 600V
350
I_F=200A
I_F=100A
300
I = 50A
F
250
140
A
120
T_VJ= 100°C
V_R =600V
I_RM
100
80
I_F=200A
60 I_F=100A
I_F= 50A
40
20
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I
RM
versus -di_F/dt
60
V
50
V_FR
40
t_fr
30
T_VJ= 100°C
I_F = 100A
V_FR
1.5
us
t_fr
1.0
20
0.5
10
0.4
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q , I
r RM
versus T_VJ
1
K/W
200
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t versus -di /dt
rr
F
D=0.7
Z_thJC
0.5
0.3
0.2
0.1
0.1 _0.05
Single Pulse
0.05
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
0
0.0
0 200 400 600 800 1A0/0u0s
di_F/dt
Fig. 6 Peak forward voltage V and t
FR
fr
versus di_F/dt
Constants for Z calculation:
thJC
i
R_thi (K/W)
t_i (s)
1
0.02
2
0.05
3
0.076
4
0.24
5
0.114
0.00002
0.00081
0.01
0.94
0.45