SUR2X100-12 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR2x100-12
Ultra Fast Recovery Epitaxial Diodes
SUR2x100-12
VRSM
V
1200
VRRM
V
1200
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I²t
TVJ=TVJM
TC=50^oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25^oC
VISOL
50/60Hz, RMS
IISOL<_1mA
Md
Mounting torque
Terminal connection torque (M4)
Weight
Maximum Ratings
130
91
TBD
900
970
810
870
4100
4000
3300
3200
-40...+150
150
-40...+150
250
2500
1.5/13
1.5/13
30
Unit
A
A
A²s
o_C
W
V~
Nm/lb.in.
g