SUR20100_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR20100 thru SUR20120
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
70
A
60
50
I_{F 40}
30
T_VJ= 25°C
T _{V J} =100° C
T _{V J} =150° C
20
10
0
0
1
2
3V 4
V_F
F ig. 1 F orward current
vers us voltage drop.
1.4
1.2
1.0
K_f
I_{R M}
0.8
0.6
Q_R
0.4
0.2
0.0
0
40
80
T_VJ
120 °C 160
F ig. 4 Dynamic parameters vers us
junction temperature.
6
C ^TVJ=100°C
V_R= 540V
5
4
Q_r
3
I_F =30A
I_F =60A
I_F =30A
I_F =15A
50
A
T _VJ=100°C
V_R = 540V
40
I_{R M}
30
I_F =30A
I_F =60A
I_F =30A
I_F =15A
max.
2
max.
20
typ.
1
10
typ.
0
1
10
100 A/ s 1000
-di_F /dt
F ig. 2 R ecovery charge vers us -di_F/dt.
0
0
200
400 A/ s 600
-di_F /dt
F ig. 3 P eak revers e current vers us
-di_F /dt.
1.0
s
0.9
0.8
t_rr ^0.7
0.6
0.5
max.
T _VJ=100°C
V _R=540V
I_F =30A
I_F =60A
I_F =30A
I_F =15A
0.4
0.3
typ.
0.2
0.1
0
200
400 ^{A/ s} 600
-di_F/dt
F ig. 5 R ecovery time vers us -di_F/dt.
60
V
50
V_FR
40
V_FR
30
1200
ns
1000
800
t_fr
600
20
400
t_fr
10
200
T _{V J} =125° C
0
I_F=30A
0
0
200
400 A/ s 600
-di_F /dt
F ig. 6 P eak forward voltage
vers us di_F/dt.
F ig. 7 T rans ient thermal impedance junction to cas e.
P3
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