SUR20100_16 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR20100 thru SUR20120
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthJA
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=125^oC; VR=0.8^.VRRM
IF=12A; TVJ=150^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25^oC
VR=540V; IF=20A; -diF/dt=100A/us; L<_0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
750
uA
250
uA
7
mA
1.87
2.15
V
1.65
V
18.2
m
1.6
60
K/W
40
60
ns
7
A
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low losses at high
switching frequencies
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Anti saturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
P2
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