SUR120120 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR120120
Ultra Fast Recovery Epitaxial Diodes
150
A
125
I_{F 100}
75
50
25
T _VJ=150°C
T _VJ=100°C
T_VJ= 25°C
0
0.0 0.5 1.0 1.5 V 2.0
V_F
F ig. 1 F orward current I_F vers us V _F
1.4
1.2
K_f
1.0
0.8
0.6
I_{R M}
Q_r
16
C
14
T_VJ= 100°C
V_R = 600V
Q_{r 12}
10
8
I_F =1 4 0 A
I_F= 70A
I_F= 35A
6
4
2
0
100
A/ s 1000
-di_F /dt
F ig. 2 R evers e recovery charge Q_r
vers us -di_F/dt
500
ns
450
t_rr
400
T_VJ= 100°C
V_R = 600V
350
I_F =1 4 0 A
I_F= 70A
300
I_F= 35A
250
120
A
100
I_{R M}
T_VJ= 100°C
V_R = 600V
80
I_F =1 4 0 A
I_F= 70A
60
I_F= 35A
40
20
0
0 200 400 600 A8/00s 1000
-di_F /dt
F ig. 3 P eak revers e current I_{R M}
vers us -di_F/dt
60
V
50
V_FR
T_VJ= 100°C
I_F = 100A
40
t_fr
V_FR
30
1.5
s
t_fr
1.0
20
0.5
10
0.4
0
40
80 120 °C 160
T_VJ
F ig. 4 Dynamic parameters Q_r, I_{R M}
vers us T _VJ
1
K /W
D=0.7
0.5
Z _{thJ C}
0.3
0.1 ^0.2
0.01
0.05
S ingle P ulse
200
0 200 400 600 A8/00s 1000
-di_F /dt
F ig. 5 R ecovery time t_rr vers us -di_F/dt
0
0.0
0 200 400 600 800 1A0/00s
di_F/dt
F ig. 6 P eak forward voltage V _FR and t_fr
vers us di_F/dt
C ons tants for Z_thJC calculation:
i
R _thi (K /W )
t_i (s )
1
0.017
0.00038
2
0.0184
0.0026
3
0.1296
0.0387
4
0.185
0.274
0.01
0.001
0.01
0.1
F ig. 7 T rans ient thermal res is tance junction to cas e
DS E I 120-12
1s
10
t