SUR120120 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR120120
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=125^oC; VR=0.8^.VRRM
IF=70A; TVJ=150^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25^oC
VR=350V; IF=75A; -diF/dt=200A/us; L_<0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
3
uA
1.5
uA
20
mA
1.55
1.8
V
1.2
V
4.6
m
0.35
0.25
K/W
35
40
60
ns
25
30
A
FEATURES
* International standard package
JEDEC TO-247AC
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling