STD18GKXX Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD18GKXX
Thyristor-Diode Modules
Fig. 1 Surge overload current
I_TSM: Crest value, t: duration
Fig. 2 ˇi²dt versus time (1-10 ms)
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor)
Fig. 2a Maximum forward current
at case temperature
10
V
V_G
1: I_GT, T_VJ = 125 C
2: I_GT, T_VJ = 25 C
3: I_GT, T_VJ = -40 C
3
1
2
56
1
4
I_GD, T_VJ = 125 C
0.1
10⁰
10¹
10²
4: P_GAV = 0.5 W
5: P_GM = 5 W
6: P_GM = 10 W
10³ mA 10⁴
I_G
Fig. 4 Gate trigger characteristics
1000
T_VJ = 25 C
s
t_gd
100
typ.
Limit
3 x STD/SDT18
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
10
1
10
100
I_G
Fig. 6 Gate trigger delay time
mA ₁₀₀₀
P3
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