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STD18GKXX Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules
STD18GKXX
Thyristor-Diode Modules
Symbol
Test Conditions
Characteristic Values
Unit
IRRM, IDRM
VT, VF
VTO
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=80A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
rT
VGT VD=6V;
IGT
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH
TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
QS TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us
IRM
RthJC
per thyristor/diode; DC current
per module
RthJK
per thyristor/diode; DC current
per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
3
mA
2.05
V
0.85
V
18
m
1.5
1.6
V
100
200
mA
0.2
V
10
mA
450
mA
200
mA
2
us
150
us
50
uC
6
A
1.3
0.65
K/W
1.5
0.75
K/W
12.7
mm
9.6
mm
50
m/s2
FEATURES
* International standard package
* DCB base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL File NO.E310749
* RoHS compliant
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
P2
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