MUR3020 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR3020, MUR3030
Ultra Fast Recovery Diodes
60
A
I_{F 40}
20
T_VJ=150°C
T_VJ=100°C
T_VJ= 25°C
800
T = 100°C
VJ
nC _{VR = 150V}
600
Q_r
400
I_F = 60A
I_{F = 30A}
I_{F = 15A}
200
30
A
25
T_VJ = 100°C
V_R = 150V
I_RM
20
15
I_F = 60A
I_{F = 30A}
I_{F = 15A}
10
5
0
0.0
0.5
1.0 V 1.5
V_F
Fig. 1 Forward current I versus V
F
F
1.4
1.2
K_f
1.0
0.8
0.6
I_RM
Q_r
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q
r
versus -di_F/dt
90
ns
80
t_rr
T = 100°C
VJ
V_R = 150V
70
I_F = 60A
I
F
=
30A
60
I
F
=
15A
50
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I
RM
versus -di_F/dt
14
V
V_FR
t_fr
12
1.2
T_VJ = 100°C
I_F = 30A
us
1.0
t_fr
0.8
V_FR
0.6
10
0.4
0.2
0.4
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
1
K/W
0.1
Z_thJC
0.01
40
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
8
0.0
0 200 400 600 A80/u0s 1000
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.465
2
0.179
3
0.256
0.005
0.0003
0.04
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t