MUR3020 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR3020, MUR3030
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
RthJC
RthCH
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=150^oC; VR=VRRM
IF=30A; TVJ=150^oC
TVJ=25^oC
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25^oC
VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
250
uA
1
mA
0.91
1.25
V
0.25
0.9
K/W
30
ns
7
A
FEATURES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch