HUR3020CT Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
A
30
I_F
20
T_VJ = 150°C
T = 100°C
VJ
T = 25°C
VJ
10
500
T = 100°C
VJ
nC _{VR = 150V}
400
Q_r
300
200
I_F = 30A
I_{F = 15A}
I_{F = 7.5A}
100
20
T_VJ = 100°C
A V_R = 150V
15
I_RM
10
I_F = 30A
I
F
=
15A
I
F
=
7.5A
5
0
0
1
V2
V_F
Fig. 1 Forward current I_F versus V_F
1.4
1.2
K_f
1.0
0.8
I_RM
Q_r
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di_F/dt
80
ns
70
t_rr
60
50
T_VJ = 100°C
V_R = 150V
I_F = 30A
I_{F = 15A}
I
F
=
7.5A
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di_F/dt
14
V
12
V_FR
t_fr
10
T_VJ = 100°C
I_F = 15A
V_FR
0.85
us
0.80
t_fr
0.75
8
0.70
40
6
0.65
0.6
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
10
K/W
1
Z_thJC
0.1
30
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
4
0.60
0 200 400 600 A80/u0s 1000
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.908
2
0.35
3
0.342
0.005
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t