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HUR3020CT Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR3020CT, HUR3030CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
HUR3020CT
HUR3030CT
VRSM
V
200
300
VRRM
V
200
300
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=135oC; rectangular, d=0.5
TVJ=45oC; tp=10ms (50Hz), sine
TVJ=25oC; non-repetitive; IAS=2.5A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md mounting torque
Weight typical
Maximum Ratings
Unit
35
2 x 15
A
140
A
0.8
mJ
0.3
A
-55...+175
175
oC
-55...+150
95
W
0.4...0.6
Nm
2
g