BTB06 Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
P (W)
8
7
6
5
4
3
2
1
IT(R MS )(A)
0
0
1
2
3
4
5
6
F ig. :3 R elative variation of thermal impeda nce
versus pulse duration.
K =[Zth/R th]
1E +0
Zth(j-c)
F ig. : 2R MS on-state current vers us cas e
temperature (full cycle).
IT(R MS ) (A)
7
6
5
4
3
2
1
0
0
25
Tc(°C )
50
75
BTB
B TA
100
125
F ig. : 4On-s tate cha racteris tics (maximum
values ).
ITM (A)
100
Tj max.
V to = 0.8V5
R d = 60 Ωm
T j=T j max
1E -1
10
Z th( j-a )
1E -2
1E -3
1E -2
tp(s )
1E -1 1E +0
1E +1
1E +2 5E +2
V T M(V )
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
F ig. : 5 S urge peak on-state current vers us
number of cycles .
F ig. : 6Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
ITS M (A)
70
60
50
40
30
R epetitive
20
T c=105°C
10
0
1
Non repetitive
T j initial=25°C
Number of yccles
10
100
t=20ms
One cycle
IT S M (A ),I²t (A ²s )
1000
100
dI/dt limitation:
50A /µs
T j initial=25°C
ITS M
1000
10
0.01
tp (ms )
0.10
1.00
I²t
10.00