BTB06 Datasheet, PDF (1/4 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
G
T2
T1
T2
G
T1
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I_{T(RMS) RMS on-state current (full sine wave)}
TO-22 0AB
Tc = 100 °C
6
A
I_TSM
I^²t
dI/dt
I_GM
P_G(AV)
T_stg
T_j
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I^²t Value for fusing
Critical rate of rise of on-state current
I_G = 2 x I _GT , tr <_ 100 ns
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
F = 60 Hz
t = 16.7 ms
63
F = 50 Hz
t = 20 ms
60
tp = 10 ms
21
F = 120 Hz
Tj = 125°C
50
tp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB
I_GT (1)
V_GT
V_D = 12 V
R_L = 30 Ω
I - II - III
I - II - III
V_GD V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C I - II - III
I_H (2) I_T = 100 mA
I_L
I_G = 1.2 I_GT
I - III
II
dV/dt (2) V_D = _{67 %} V_{DRM gate open Tj = 125°C}
(dI/dt)c (2) Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
BW
35
50
1.3
0.2
35
50
50
70
60
80
400
1000
3.5
5.3
A
A^²s
A/µs
A
W
°C
Unit
mA
V
V
mA
mA
V/µs
A/ms