BAT15 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)

BTA15
Discrete Triacs(Isolated)
F ig. 1: Maximum power dis s ipa tion vers us R MS
on-s tate current (full cycle).
P (W)
20
18
16
14
12
10
8
6
4
2
IT(R MS ) (A)
0
0
2
4
6
8 10 12 14 16
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
IT(R MS ) (A)
18
16
14
12
10
8
6
4
2
0
0
25
BTB
B TA
Tc(° C)
50
75
100
125
F ig. 4: O n-s tate chara cteris tics (ma ximum
values )
K =[Zth/R th]
1E +0
Zth(j-c )
ITM (A)
200
100
Tj max
1E -1
Z th ( j-a )
1E -2
1E -3
1E -2
tp (s )
1E -1 1E +0
1E +1
1E +2 5E +2
10
T j=25° C
VTM (V)
Tj max:
V to = 0.85 V
R d = 25 mΩ
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
F ig. 5: S urge peak on-s tate current versus
number of cycles.
ITS M (A)
180
160
140
120
100
Non repetitive
T j initial=25°C
80
60
R epetitive
T c=85°C
40
20
Number of cycles
0
1
10
100
t=20ms
One cycle
1000
P3
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