BAT15 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)

BTA15
Discrete Triacs(Isolated)
T2
BTA15-200
BTA15-400
BTA15-600
BTA15-800
BTA15-1000
BTA15-1200
G
T1
V VDRM/RRM
DSM/RSM
V
V
200 300
400 500
600 700
800 900
1000 1100
1200 1300
ABSOLUT E MAXIMUM RATINGS
Symbol
Parame ter
IT(RMS) _{RMS on-state current (full sine wave)}
TO-220AB
Tc = 100°C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t
I²t Value for fusing
Critical rate of rise of on-state current
dI/dt
IG = 2 x IGT , tr <_ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
Value
15
160
168
144
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T j = 25° C, unl es s o the rw ise spec ified )
■ SNUBBE RL ES and LOGIC LEVEL(3 Quadrants)
Symbo l
Test Conditions
Quadran t
BTA
IGT
VGT
VGD
IH
IL
dV/dt
(dI/dt)c
VD = 12 V RL = 33 Ω
I - II - III
I - II - III
VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III
IT = 500 mA
IG = 1.2 IGT
I - III
II
VD _{= 67 %} VDRM _{gate open Tj = 125°C}
Without snubber
Tj = 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
CW
35
1.3
0.2
35
50
60
500
8.5
BW
50
50
70
80
1000
14
Unit
mA
V
V
mA
mA
V/µs
A/ms
P1
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