SUR20100CT Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR20100CT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=125^oC; VR=0.8^.VRRM
IF=12A; TVJ=150^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25^oC
VR=540V; IF=10A; -diF/dt=100A/us; L_<0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
250
uA
150
uA
4
mA
2.1
2.7
V
1.67
V
33.6
m
1.6
0.5
K/W
60
50
60
ns
6.5
7.2
A
FEATURES
* International standard package
JEDEC TO-220AB
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling