SUR20100CT Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR20100CT
Ultra Fast Recovery Epitaxial Diodes
AC A
A
C(TAB)
C
A
A=Anode, C=Cathode, TAB=Cathode
SUR20100CT
VRSM
V
1000
VRRM
V
1000
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I²t
TVJ=TVJM
TC=100^oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md Mounting torque
Weight
Maximum Ratings
Unit
25
10
A
150
75
80
65
A
70
28
27
21
A²s
20
-40...+150
150
o_C
-40...+150
78
W
0.4...0.6
Nm
2
g