STD181 Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules, Diode-Thyristor Modules

STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25^oC
VTO For power-loss calculations only (TVJ=125^oC)
rT
VGT ^VD=6V;
IGT
VD=6V;
TVJ=25^oC
TVJ=-40^oC
TVJ=25^oC
TVJ=-40^oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25^oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us
IH
TVJ=25^oC; VD=6V; RGK=
tgd
TVJ=25^oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
IRM
per thyristor/diode; DC current
RthJC _{per module}
per thyristor/diode; DC current
RthJK _{per module}
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
Unit
10
mA
1.25
V
0.88
V
1.15
m
2.5
2.6
V
150
200
mA
0.2
V
10
mA
300
mA
200
mA
2
us
typ.
150
us
550
235
0.155
0.0775
0.225
0.1125
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s²
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits