STD181 Datasheet, PDF (1/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules, Diode-Thyristor Modules

STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT181GK08 900
STD/SDT181GK12 1300
STD/SDT181GK14 1500
STD/SDT181GK16 1700
STD/SDT181GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , I TRMS FRMS TVJ=TVJM
I , I TAVM FAVM TC=85^oC; 180^o sine
TVJ=45^oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45^oC
i²dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A
diG/dt=0.5A/us
repetitive, IT=500A
non repetitive, IT=500A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M6)
Terminal connection torque (M6)
Weight Typical including screws
Maximum Ratings
300
181
6000
6400
5250
5600
180000
170000
137000
128000
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
125
Unit
A
A
A²s
A/us
V/us
W
W
V
o_C
V~
Nm/lb.in.
g