SD30_16 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Discrete Diodes

SD30
Discrete Diodes
50
A
40
I_F
30
20
10
T_VJ=150°C
T_VJ= 25°C
250 _{50Hz, 80% VRRM}
A
I_FSM²⁰⁰
T_VJ = 45°C
150
100
T_VJ = 150°C
50
10³
A²s ^{VR = 0 V}
I²t
T_VJ = 45°C
T_VJ = 150°C
0
0.0
0.4
0.8
1.2 V 1.6
V_F
Fig. 1 Forward current versus voltage
drop per diode
60
W
P_tot
40
20
0
0.001
0.01
0.1 s 1
t
Fig. 2 Surge overload current
R_thHA :
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
10²
1
2 3 4 5 6 7 8ms910
t
Fig. 3 I²t versus time per diode
35
A
30
I_F(AV)M
25
20
15
10
5
0
0
10
20
30 A 0 20 40 60 80 100 120 140 °C
I_d(AV)M
T_amb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 °
1.2
K/W
1.0
Z_thJC
0.8
0
0 20 40 60 80 100 120 140 °C
T_C
Fig. 5 Max. forward current versus
case temperature
0.6
0.4
0.2
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
Constants for Z_thJC calculation:
i
1
2
3
4
5
1
s
10
t
R_thi (K/W)
0.01362
0.1962
0.267
0.3052
0.218
t_i (s)
0.0001
0.00316
0.023
0.4
0.15
P2
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