SD30_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete Diodes

SD30
Discrete Diodes
A
C
C(TAB)
A
C
A=Anode, C=Cathode, TAB=Cathode
SD3001
SD3002
SD3004
SD3008
SD3010
SD3012
SD3016
VRSM
V
200
300
500
900
1100
1300
1700
VRRM
V
100
200
400
800
1000
1200
1600
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Test Conditions
IF(AV)M
IFSM
I²t
TC=95^oC; 180^o sine
TVJ=45^oC;
VR =0V;
TVJ=150^oC;
VR =0V;
TVJ=45^oC;
VR =0V;
TVJ=150^oC;
VR =0V;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Md Mounting torque
Weight
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
TVJ=TVJM; VR=VRRM
IF=45A; TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
DC current
Maximum Ratings
Unit
30
A
300
330
270
A
300
450
460
365
A²s
385
-40...+150
150
o_C
-40...+150
0.4...0.6
Nm
2
g
Characteristic Values
Unit
<_ 1
mA
<_ 1.45
V
0.85
V
13
m
1.0
K/W
P1
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