MUR1660CT Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR1660CT
Ultra Fast Recovery Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
16
12
8
4
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100.0
TJ = 125 C
10.0
TJ = 100 C
TJ = 75 C
1.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ = 125 C
50-200V
10
300-400V
500-600V
0.1
TJ = 25 C
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1.0
TJ = 25 C
0.1
0
PULSE WIDTH 300uas
2% Duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
50-400V
100
500-600V
TJ = 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS