MUR1660CT Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR1660CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MUR1660CT
VRRM
V
600
VRMS
V
420
VDC
V
600
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=100^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF Maximum Forward Voltage At 8.0A DC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=100^oC
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance (Note 3)
TJ, TSTG Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
Maximum Ratings
16
125
1.5
5
500
80
50
1.5
-55 to +150
Unit
A
A
V
uA
pF
ns
o_C/W
o_C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any