6SI40N12 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – NPT IGBT Modules

6SI40N12
NPT IGBT Modules
Characteristics
Symbol
Conditions
IGBT Wechselrichter/ IGBT Inverter
VGE(TO) VGE = VCE, IC =1.5mA
ICES
VGE = 0; VCE = 1200V
IGES
rCE
VCE(sat)
VCE=0; VGE=20V
VGE = 15V, Tj = 25(125)^oC
IC =25A; VGE = 15V; Tj = 25(125)^oC
Cies
under following conditions
VGE = 0, VCE = 25V, f = 1MHz
LCE
RCC'+EE'
under following conditions:
td(on)
tr
VCC = 600V, IC = INenn
RGon = RGoff = 27 , , Tj = 25(125)^oC
td(off)
VGE = ± 15V
tf
Eon(Eoff) Tj = 125^oC
Diode Wechselrichter/ Diode Inverter
under following condition
VF
IF = 40A; VGE = 0V; Tj = 25(125)^oC
IRM
IF = INeen; Tj = 25(125)^oC
Qr
-di/dt = 1000A/us
Erec
VGE = -10V, VR=600V
IGBT Brems-Chopper/ IGBT Brake-Chopper
VCE sat
under following conditions
IC = 15A; VGE = 15V; Tj = 25(125)^oC
VGE(TO) VCE=VGE, IC=0.5mA
Cies
f=1MHz, VCE=25V, VGE=0V
ICES
VGE=0V, VCE=1200V
IGES
VCE=0V, VGE=20V
Diode Brems-Chopper/ Diode Brake-Chopper
VF
IF=15A, Tj = 25(125)^oC
Mechanical Data
Md
Mounting torque (M5)
Terminal connection torque (M5)
w
TC = 25^oC, unless otherwise specified
min.
typ.
max.
Units
5.0
5.8
6.5
V
5
mA
400
nA
14.6(20) 18.6(25.3) m
1.7(2.0) 2.15(-)
V
1.8
nF
60
nH
7.0
m
85(90)
ns
30(45)
ns
420(520)
ns
65(90)
ns
5.8(4.9)
mJ
1.75(1.75) 2.3(-)
V
45(46)
A
4.4(8.4)
uC
1.55(3.1)
mJ
1.7(2.0) 2.15
V
5.0
5.8
6.5
V
1.1
nF
5.0
500
mA
400
nA
2.05(2.2) 2.5
V
2.5-4.0/22-35
2.5-4.0/22-35
190
Nm/lb.in.
g
Sirectifier^R