6SI40N12 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – NPT IGBT Modules

6SI40N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Symbol
Conditions
IGBT Wechselrichter/ IGBT Inverter
VCES
IC
ICRM
TC= 25(80)^oC
TC= 80^oC, tP =1ms
Ptot
VGES
Diode Wechselrichter/ Diode Inverter
IF
IFRM
tP =1ms
I ²t
VR=0V, tP =10ms; Tj=150^oC
IGBT Brems-Chopper/ IGBT Brake-Chopper
VCES
IC
TC= 25(80)^oC
ICRM
TC= 80^oC, tP =1ms
Ptot
VGES
Diode Brems-Chopper/ Diode Brake-Chopper
IF
IFRM
tP =1ms
Module Isolation/ Module Isolation
VISOL
RMS, f=50Hz, t=1min, NTC connect to Baseplate
TC = 25^oC, unless otherwise specified
Values
Units
1200
V
55(40)
A
80
A
200
W
+^_20
V
40
A
80
A
320
A²s
1200
V
25(15)
A
30
A
100
W
+^_20
V
10
A
20
A
2500
V
Sirectifier^R