PS75N75 Datasheet, PDF (3/5 Pages) Sirectifier Global Corp. – N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt

PS75N75
250
200
150
100
VGE = 10V
9V
8V
7V
6V
5V
50
0
0
4V
10
20
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
5000
4000
f = 1MHz
VGS = 0V
250
200
VGS = 10V
150
100
50
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.8
ID = 30A
VGS = 10V
2.2
3000
1.6
2000
CISS
1.0
1000
COSS
CROSS
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3. Capacitance Characteristics
0.4
-50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (ºC)
Figure 4. On-Resistance Variation with temperature
1.3
VGE = 10V
1.2
ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (ºC)
Figure 5. Gate Threshold Variation
with Temperature
1.20
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (ºC)
Figure 6. Breakdown Voltage Variation
with Temperature
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