PS75N75 Datasheet, PDF (2/5 Pages) Sirectifier Global Corp. – N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt

PS75N75
□ Electrical Characteristics
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BVDSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
Ststic Drain-Source On-Resistance RDS(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERSTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Times
Fall Time
Qg
Qgs
Qgd
TD(on)
tr
TD(off)
tf
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
CONDITIONS
VGS = 0V, ID = -250μA
VDS = 20V, VGS = 0V
VGS = ±16V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = 10V, ID = 48A
VDS = 25V, ID = 30A
VDS = 60V, ID = 48A
VGS = 10V, RGEN = 4.7Ω
VDD = 38V, ID = 48A
VGEN = 10V, RL = 10Ω
RGEN = 4.7Ω
VDD = 38V, ID = 48A
VGEN = 10V, RL = 10Ω
RGEN = 4.7Ω
VDS = 25V, VGS = 0V
f = 1.0MHz
VGS = 0V, IS = 60A
MIN.
TYP.
MAX. UNIT
75
-
-
V
-
-
20
μA
-
-
±100
nA
2
-
4
V
-
9
11
mΩ
-
50
-
S
-
90
140
-
20
35
nC
-
30
45
-
12
-
nS
-
79
-
-
80
-
nS
-
52
-
-
3300
-
-
530
-
pF
-
80
-
-
1.5
-
V
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