SP43602 Datasheet, PDF (4/10 Pages) SIPAT Co,Ltd – 50 Ω RF Digital Attenuator

SP43602
50 Ω RF Digital Attenuator
Figure 13. Pin Configuration (Top View)
GND 1
VDD 2
P/S ³
GND ⁴
RF1 5
GND 6
Exposed
Solder
Pad
18 SI
17 CLK
16 LE
15 GND
14 RF2
13 GND
Table 2. Pin Descriptions
Pin No.
1
2
3
4
5
6 - 13
14
15
16
17
18
19
20
21
22
23
24
Paddle
Pin Name
GND
V_DD
P/S
GND
RF1
GND
RF2
GND
LE
CLK
SI
C16 (D6)
C8 (D5)
C4 (D4)
C2 (D3)
C1 (D2)
C0.5 (D1)
GND
Description
Ground
Power supply pin
Serial/Parallel mode select
Ground
RF1 port
Ground
RF2 port
Ground
Serial interface Latch Enable input
Serial interface Clock input
Serial interface Data input
Parallel control bit, 16 dB
Parallel control bit, 8 dB
Parallel control bit, 4 dB
Parallel control bit, 2 dB
Parallel control bit, 1 dB
Parallel control bit, 0.5 dB
Ground for proper operation
Note: Ground C0.5, C1, C2, C4, C8, C16 if not in use.
Exposed Solder Pad Connection
The exposed solder pad on the bottom of the package must
be grounded for proper device operation.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the SP43602 in the
24-lead 4x4 QFN package is MSL1.
Switching Frequency
The SP43602 has a maximum 25 kHz switching rate.
Switching rate is defined to be the speed at which the DSA
can be toggled across attenuation states.
Latch-Up Avoidance
Unlike conventional CMOS devices, Silicon-on-Sapphire
devices are immune to latch-up.
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Table 3. Operating Ranges
Parameter
Min Typ Max Units
V_DD Power Supply Voltage
3.0
V_DD Power Supply Voltage
I_DD Power Supply Current
Digital Input High
2.6
P_IN Input power (50Ω):
9 KHz ≤ 20 MHz
20 MHz ≤ 5 GHz
3.3
V
5.0
5.5
V
70
350
μA
5.5
V
Fig. 14 dBm
+23 dBm
T_OP Operating temperature range
-40
25
85
°C
Digital Input Low
0
1
V
Digital Input Leakage¹
15
μA
Note 1. Input leakage current per Control pin
Table 4. Absolute Maximum Ratings
Symbol
Parameter/Conditions
Min Max Units
V_DD
V_I
T_ST
P_IN
V_ESD
Power supply voltage
-0.3
Voltage on any Digital input
-0.3
Storage temperature range
-65
Input power (50Ω)
9 kHz ≤ 20 MHz
20 MHz ≤ 5 GHz
ESD voltage (HBM)¹
ESD voltage (Machine Model)
6.0
V
5.8
V
150
°C
Fig. 14 dBm
+23 dBm
500
V
100
V
Note: 1. Human Body Model (HBM, MIL_STD 883 Method 3015.7)
Exceeding absolute maximum ratings may cause permanent
damage. Operation should be restricted to the limits in the
Operating Ranges table. Operation between operating range
maximum and absolute maximum for extended periods may
reduce reliability.
Figure 14. Maximum Power Handling Capability
30
25
20
15
10
5
0
1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09
Hz
Electrostatic Discharge (ESD) Precautions
When handling this Silicon-on-Sapphire device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains circuitry to
protect it from damage due to ESD, precautions should be
taken to avoid exceeding the specified rating.
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