SSFM2506 Datasheet, PDF (5/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

SSFM2506
Typical electrical and thermal characteristics
10
9
8
7
6
5
VDS=12.5V
4
ID=30A
3
2
1
0
0
5
10
15
20
25
30
35
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
3000
2500
2000
Ciss
1500
1000
500
Crss
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
Coss=Cds+Cgd
Crss=Cgd
Coss
0
0
5
10
15
20
25
VDS, drain to source voltage(V)
Figure 8: Capacitance Characteristics
1000
200
100
Ron limited
10
DC
1
Tj(max)=175℃ Tc=25℃
180
160
10uS
140
120
100uS
100
1mS
80
10mS
60
40
20
Tj(max)=175℃
Ta=25℃
0.1
0.01
0.1
1
0
10
100
0.0001 0.001
0.01
0.1
1
10
VDS,drain to source voltage(V)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area⑤
Figure 10: Single Pulse Power Rating
Junction-to-Case⑤
60
50
40
30
20
10
0
0
25
50
75 100 125 150 175
TCASE (°C)
Figure 11: Power De-rating③
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
TCASE (°C)
Figure 12: Current De-rating③
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 5 of 9