SSFM2506 Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
25V
R_DS(on) 4.1mohm(typ.)
I_D
60A
Features and Benefits:
TO-252 (D-PAK)
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
SSFM2506
Marking and pin Schematic diagram
Assignment
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely
low on resistance, fast switching speed and short reverse recovery time. These features combine to make this
design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other
applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
VDS
VGS
dv/dt
EAS
EAR
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Peak diode recovery voltage
Single Pulse Avalanche Energy @ L=0.1mH②
Repetitive avalanche energy
Avalanche Current @ L=0.1mH②
Operating Junction and Storage Temperature Range
Max.
60
50
130
130
45
22
25
± 20
1.5
90
228
42
-55 to + 175
Units
A
W
W
V
V
V/nS
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.02.25
www.silikron.com
Version : 1.2
page 1 of 9