SSFM8005 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

SSFM8005
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol Parameter
Min. Typ. Max Units Conditions
BVDSS
Drain-to-Source breakdown
voltage
80
—
—
V
VGS = 0V,
ID = 250μA
RDS(on) Static Drain-to-Source
on-resistance
— 4.5 5
VGS = 10V,
mΩ
ID = 20A
VGS(th) Gate threshold voltage
2
3
4
V
VDS = VGS,
ID = 250μA
IDSS
Drain-to-Source leakage current
——
10
VDS = 80V,
VGS = 0V
μA
VDS =80V,
——
50
VGS = 0V,
TJ = 55°C
IGSS
Gate-to-Source forward leakage — —
Gate-to-Source reverse leakage -100 —
100
nA
—
VGS =25V
VGS = -25V
gFS
Forward Transconductance
37
S
VDS=5V, ID=20A
Qg
Total gate charge
— 96
120
Qgs
Gate-to-Source charge
— 29
36
VGS=10V,
nC
Qgd
Gate-to-Drain("Miller") charge — 27
36
VDS=40V,
Qg(th) Gate charge at shreshold
— 18
24
ID=20A
Vplateau gate plateau voltage
— 5.28 6.2 V
td(on)
Turn-on delay time
— 24.8 —
VGS=10V,
tr
td(off)
Rise time
Turn-Off delay time
— 12.2 —
ns
— 88
—
VDS=40V,
RL=15Ω,
tf
Fall time
— 34
—
RGEN=2.5Ω
Ciss
Input capacitance
— 6286 —
VGS=0V,
Coss
Output capacitance
—
670 —
pF
VDS=40V,
Crss
Reverse transfer capacitance — 204 —
f=1MHz
Rg
Gate resistance
—
—
0.5
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min. Typ. Max Units Conditions
180
A
VSD
trr
Qrr
Diode Forward Voltage
—
Reverse Recovery Time
—
Reverse Recovery Charge —
0.63 1
41
—
65
—
V
IS=1A, VGS=0V
ns
IF=20A,
nC
dI/dt=100A/μs
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
2010.12.14
www.silikron.com
Version : 3.0
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