SSFM8005 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
SSFM8005
V_DSS
80V
R_DS(on)
4.5mohm
I_D
180A
Features and Benefits:
TO-220AB
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175℃ operating temperature
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Power Dissipation③
VDS
Drain-Source Voltage
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH②
Avalanche Current @ L=0.1mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
180
135
500
500
346
178
80
± 25
450
95
-55 to + 175
Units
A
W
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Value
0.34
12
55
Unit
℃/W
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2010.12.14
www.silikron.com
Version : 3.0
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