SSFD3006 Datasheet, PDF (2/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

SSFD3006
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
2
100
50
Units
℃/W
℃/W
℃/W
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
V_(BR)DSS
Parameter
Drain-to-Source breakdown
voltage
R_DS(on)
Static Drain-to-Source
on-resistance
V_GS(th)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate threshold voltage
Drain-to-Source leakage
current
Gate-to-Source forward
leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min. Typ.
30
—
—
3.8
—
6.4
—
4.9
—
7.2
1
1.5
— 1.21
—
—
—
—
—
—
-100 —
—
35
—
8
—
18
—
12
—
63
—
41
—
11
— 3833
— 459
— 427
Max.
—
6
—
8.5
—
3
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
Units Conditions
V
V_GS = 0V, ID = 250μA
V_GS=10V,I_D = 15A
T_J = 125℃
mΩ
V_GS=4.5V,I_D =11.5A
T_J = 125℃
V_DS = V_GS, I_D = 250μA
V
T_J = 125℃
V_DS = 30V,V_GS = 0V
μA
T_J = 125°C
V_GS =20V
nA
V_GS = -20V
I_D = 32A,
nC V_DS=15V,
V_GS =4.5V
V_GS=4.5V, VDS=15V,
ns
R_GEN=2Ω，I_D = 32A,
V_GS = 0V
pF
V_DS = 15V
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
I_S
V_SD
t_rr
Q_rr
Parameter
Maximum Body-Diode
Continuous Curren
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
—
—
Typ.
—
0.72
16
8.8
Max.
90
1.2
—
—
Units Conditions
A
V
I_S=2.8A, V_GS=0V
ns
T_J = 25°C, I_F =30A,
nC di/dt = 150A/μs
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com
Version : 1.0
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