SSFD3006 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
30V
R_DS(on) 3.8mΩ (typ.)
I_D
90A
TO-252 (D-PAK)
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ High Power and current handing capability
„ 175℃ operating temperature
SSFD3006
S^SS^SF^FD³⁶3¹0²0^D6
Marking and pin Schematic diagram
Assignment
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
I_SM
P_D @TC = 25°C
P_D @TC =100°C
V_DS
V_GS
dv/dt
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Peak diode recovery voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
90
66
360
360
75
78
30
± 20
1.5
90
42
-55 to + 175
Units
A
W
W
V
V
V/nS
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.10.10
www.silikron.com
Version : 1.0
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