SSF8810 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF8810
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
20
—
—
—
—
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
14
18
20
24
38
42
—
—
—
—
—
—
—
10
2.3
3
7.3
60
18
5.9
632
142
134
Max.
—
20
—
28
—
50
—
1
1
50
100
-100
10
-10
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
mΩ
mΩ
V
μA
nA
uA
nC
ns
pF
Source-Drain Ratings and Characteristics
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 7A
TJ = 125°C
VGS=2.5V,ID = 5.5A
TJ = 125°C
VGS=1.8V,ID = 5A
TJ = 125°C
VDS = VGS, ID = 250μA
VDS = 20V,VGS = 0V
TJ = 125°C
VGS = 4.5V
VGS = -4.5V
VGS = 10V
VGS = -10V
ID = 7A,
VDS=10V,
VGS = 4.5V
VGS=4.5V, VDS =10V,
RGEN=3Ω,ID =6.5
VGS = 0V
VDS = 10V
ƒ = 1MHz
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
8①
—
—
25
—
—
1.2
—
35
—
—
7.2
—
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF =7A,
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 2 of 7