SSF2627 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V_GS(th)
R_DS(ON)
g_FS
C_lss
C_oss
C_rss
t _d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_SD
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
SSF2627
V_DS=V_GS, I_D =-250μA
V_GS=-4.5V, I_D =-5.4A
V_GS=-2.5V, I_D =-2.7A
V_DS=-5V, I_D =-5.4A
-0.40 -0.7 -1.50
V
27
33
mΩ
38
48
8
S
V_DS=-16V,V_GS=0V,
F=1.0MHz
1350
PF
510
PF
200
PF
18
nS
V_DD=-16V, I_D =-1A
25
nS
V_GS=-4.5V,R_GEN=6Ω
70
nS
55
nS
V_DS=-16V,
I_D=-5.4A,V_GS=-4.5V
16
nC
3.5
nC
4
nC
V_GS=0V,I_S=-1A
-0.8
-1
V
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0