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SSF2627 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability
SSF2627
DESCRIPTION
The SSF2627 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
GENERAL FEATURES
●VDS = -20V,ID = -5.4A
RDS(ON) < 48mΩ @ VGS=-2.5V
RDS(ON) < 33mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
D
G
S
Schematic diagram
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2627
SSF2627
SOP-8
Ø330mm
SOP-8 top view
Tape width
8mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±10
-5.4
-28
1.47
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
85
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
Min Typ Max Unit
-20
V
-1
μA
±100
nA
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