IRF830 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 500 —
— V VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.6 — V/ْC Reference to 25ْC,ID=250μA
RDS(on)
Static Drain-to-Source On-resistance — 1.15 1.2 Ω VGS=10V,ID=2.5A ④
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V VDS=VGS,ID=250μA
gfs
Forward Transconductance
— 4.3 — S VDS=40V,ID=2.25A
IDSS
Drain-to-Source Leakage current
——
——
1 _μA VDS=500V,VGS=0V
10
VDS=400V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
—
—
nA
-100
VGS=-30V
Qg
Total Gate Charge
— 11 15
ID=5A
Qgs
Gate-to-Source charge
—3
— nC VDS=400V
Qgd
Gate-to-Drain("Miller") charge
—5
—
VGS=10V
td(on)
Turn-on Delay Time
— 13 36
VDD=250V
tr
td(off)
Rise Time
Turn-Off Delay Time
— 22
— 28
54
ID=5A
66 ^{nS RG=25Ω}
tf
Fall Time
— 20 50
Ciss
Input Capacitance
— 515 670
VGS=0V
Coss
Output Capacitance
— 55 72 pF VDS=25V
Crss
Reverse Transfer Capacitance
— 6.5 8.5
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ.
IS ^{Continuous Source Current .} —
—
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
._—
—
VSD Diode Forward Voltage
Trr Reverse Recovery Time
—
—
—
300
Qrr Reverse Recovery Charge
—
1.8
Notes:
① Repetitive rating; pulse width limited by
maxIimum. junction temperature
② L = 15mH, IAS =4 A, VDD = 50V,
RG = 25Ω, Starting TJ = 25°C
Max.
5
20
1.4
—
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ْC,IS=5A,VGS=0V ④
nS TJ=25ْC,IF=5A
uC ^{di/dt=100A/μs ④}
③ ISD≤5A,di/dt≤200A/μs, VDD≤V(BR)DSS,
TJ≤25 ْC
④ Pulse width≤300μS; duty cycle≤2%
2