IRF830 Datasheet, PDF (1/6 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
The IRF830 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
energy pulse in the avalanche, and increases packing density.
Application
■ High current, high speed switching
■ Lighting
■ Ideal for off-line power supply, adaptor, PFC
VDSS = 500V
ID = 5A
RDS(ON) = 1.2Ω
IRF830 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous Drain Current,VGS@10V
ID@Tc=100ْC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current ①
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ②
IAR
Avalanche Current ①
EAR
Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
5
3
20
80
0.67
±30
120
5
8.5
4.5
–55 to +150
Units
A
W
W/ ْC
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
1.56
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62.5
Units
ْC/W
1