SSF3055 Datasheet, PDF (1/3 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

DESCRIPTION
The SSF3055 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a Battery protection or in
other Switching application.
GENERAL FEATURES
● V_DS = 25V,I_D = 12A
R_DS(ON) < 120mΩ @ V_GS=5V
R_DS(ON) < 90mΩ @ V_GS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
SSF3055
D
G
S
Schematic diagram
3
S
2_D
1
G
Marking and pin Assignment
TO-252(DPAK) top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3055
SSF3055
To-252(DPAK)
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_D
I_DM
P_D
T_J,T_STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250µA
Zero Gate Voltage Drain Current
I_DSS
V_DS=20V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±20V,V_DS=0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V_GS(th)
R_DS(ON)
V_DS=V_GS,I_D=250µA
V_GS=5V, I_D=12A
V_GS=10V, I_D=12A
Limit
25
±20
12
45
48
-55 To 150
Unit
V
V
A
A
W
℃
75
℃ /W
Min Typ Max
25
25
±250
0.8 1.2
2.5
70
120
50
90
Unit
V
µA
nA
V
mΩ
mΩ
©Silikron Semiconductor CO.,LTD.
2008.7.29
Version : 1.0
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